Cited Article: Ghosh, S. Carbon nanotube flow sensors
Alert Expires: 22 OCT 2009
Number of Citing Articles: 1 new records this week (1 in this e-mail)
Organization ID: 3b97d1bbc1878baed0ab183d8b03130b
========================================================================
Note: Instructions on how to purchase the full text of an article and Help Desk Contact information are at the end of the e-mail.
========================================================================
*Record 1 of 1.
*View Full Record: http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Alerting&SrcApp=Alerting&DestApp=WOS&DestLinkType=FullRecord;KeyUT=000260463300007
*Order Full Text [ ]
Title:
Ultra-Low-Powered Aqueous Shear Stress Sensors Based on Bulk EG-CNTs Integrated in Microfluidic Systems
Authors:
Qu, YL; Chow, WWY; Ouyang, MX; Tung, SCH; Li, WJ; Han, XL
Author Full Names:
Qu, Yanli
Source:
IEEE TRANSACTIONS ON NANOTECHNOLOGY 7 (5): 565-572 SEP 2008
Language:
English
Document Type:
Article
Author Keywords:
Aqueous shear stress sensors; carbon nanotubes (CNT); CNT sensors; microfluidic system; ultra-low-powered sensors
Keywords Plus:
CARBON NANOTUBES
Abstract:
Novel aqueous shear stress sensors based on bulk carbon nanotubes (CNTs) were developed by utilizing microelectricalmechanical system (MEMS) compatible fabrication technology. The sensors were fabricated on glass substrates by batch assembling electronics-grade CNTs (EG-CNTs) as sensing elements between microelectrode pairs using dielectrophoretic technique. Then, the CNT sensors were permanently integrated in glass-polydimethylsiloxane (PDMS) microfluidic channels by using standard glass-PDMS bonding process. Upon exposure to deionized (DI) water flow in the microchannel, the characteristics of the CNT sensors were investigated at room temperature under constant current (CC) mode. The specific electrical responses of the CNT sensors at different currents have been measured. It was found that the electrical resistance of the CNT sensors increased noticeably in response to the introduction of fluid shear stress when low activation current (< 1 mA) was used, and unexpectedly d!
ecreased when the current exceeded 5 mA. We have shown that the sensor could be activated using input currents as low as 100 mu A to measure the flow shear stress. The experimental results showed that the output resistance change could be plotted as a linear function of the shear stress to the one-third power. This result proved that the EG-CNT sensors can be operated as conventional thermal flow sensors but only require ultra-low activation power (similar to 1 mu W), which is similar to 1000 times lower than the conventional MEMS thermal flow sensors.
Reprint Address:
Qu, YL, Chinese Univ Hong Kong, Ctr Micro & Nano Syst, Hong Kong, Hong Kong, Peoples R China.
Research Institution addresses:
Chinese Univ Hong Kong, Ctr Micro & Nano Syst, Hong Kong, Hong Kong, Peoples R China; Chinese Acad Sci, State Key Lab Robot, Shenyang Inst Automat, Shenyang 110016, Peoples R China; Chinese Univ Hong Kong, Mech & Automat Engn Dept, Hong Kong, Hong Kong, Peoples R China; Univ Arkansas, Dept Mech Engn, Fayetteville, AR 72701 USA; Brewer Sci Inc, Rolla, MO 65401 USA
Cited References:
FOURGUETTE D, 2003, 41 AIAA AER SCI M EX.
FUNG CKM, 2005, PROC IEEE MICR ELECT, P251.
FUNG CMKM, 2004, IEEE T NANOTECHNOL, V3, P395, DOI 10.1109/TNANO.2004.834156.
GHOSH S, 2003, SCIENCE, V299, P1042, DOI 10.1126/science.1079080.
GOLDSTEIN RJ, 1996, FLUID MECH MEASUREME, P559.
LIU DY, 1999, ACTA PHYS SIN-OV ED, V8, P1.
NAUGHTON JW, 2002, PROG AEROSP SCI, V38, P515.
NI CN, 2007, P MAT RES SOC S, V963, P125.
QU YL, 2007, 1 ANN IEEE INT C NAN.
SCHETZ JA, 1996, HDB FLUID DYNAMICS F, V1.
SHEPLAK M, 2004, 24 AIAA AER MEAS TEC.
TOMBLER TW, 2000, NATURE, V405, P769.
WONG VTS, 2003, PROC IEEE MICR ELECT, P41.
XU Y, 2005, J MICROELECTROMECH S, V14, P1023, DOI 10.1109/JMEMS.2005.856644.
ZOHAR Y, 2003, HEAT CONVECTION MICR, P53.
Cited Reference Count:
15
Times Cited:
0
Publisher:
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC; 445 HOES LANE, PISCATAWAY, NJ 08855 USA
Subject Category:
Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary; Physics, Applied
ISSN:
1536-125X
DOI:
10.1109/TNANO.2008.928572
IDS Number:
366EL
========================================================================
*Order Full Text*
All Customers
--------------
Please contact your library administrator, or person(s) responsible for
document delivery, to find out more about your organization's policy for
obtaining the full text of the above articles. If your organization does
not have a current document delivery provider, your administrator can
contact ISI Document Solution at service@isidoc.com, or call 800-603-4367
or 734-459-8565.
IDS Customers
--------------
IDS customers can purchase the full text of an article (having page number,
volume, and issue information) by returning this ENTIRE message as a Reply
to Sender or Forward to orders@isidoc.com. Mark your choices with an X in
the "Order Full Text: []" brackets for each item. For example, [X].
Please enter your account number here:
========================================================================
*Help Desk Contact Information*
If you have any questions, please visit the Thomson Scientific Technical Support Contact Information Web page:
http://www.thomsonscientific.com/support/techsupport
========================================================================
No comments:
Post a Comment