Wednesday, December 31, 2008

ISI Web of Knowledge Alert - Ghosh, S

ISI Web of Knowledge Citation Alert (Solaris 2.1)

Cited Article: Ghosh, S. Carbon nanotube flow sensors
Alert Expires: 22 OCT 2009
Number of Citing Articles: 1 new records this week (1 in this e-mail)
Organization ID: 3b97d1bbc1878baed0ab183d8b03130b
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Title:
DEP-Based Fabrication and Characterization of Electronic-Grade CNTs for Nano-Sensing Applications

Authors:
Ouyang, MX; Sin, MLY; Chow, GCT; Li, WJ; Han, XL; Janzen, DC

Author Full Names:
Ouyang, Mengxing; Sin, Mandy L. Y.; Chow, Gary C. T.; Li, Wen J.; Han, Xuliang; Janzen, Daniel C.

Source:
2007 7TH IEEE CONFERENCE ON NANOTECHNOLOGY, VOL 1-3 : 1-6 2007

Language:
English

Document Type:
Proceedings Paper

Author Keywords:
Dielectrophoresis; Electronic-grade carbon nanotubes; Micro/nano sensing; Humidity sensor

Keywords Plus:
CARBON; SENSORS; WALL

Abstract:
Sensing devices using electronic-grade carbon nanotubes (EG-CNTs) as resistive sensing element were fabricated by dielectrophoresis (DEP) manipulation. DEP-based fabrication of EG-CNTs is important as it allows some control of the nominal resistance of the fabricated sensors, which is essential to improve the SNR of CNT sensors. The devices were characterized and the potential of EG-CNTs to serve as a novel temperature and humidity sensing element has been demonstrated. Electrical characterization revealed that the EG-CNTs sensors, which exhibit large linear IN range, have both positive and negative TCR at higher operational temperatures. In addition, its resistance-humidity linear dependency proves its humidity sensing capability. Moreover, the EG-CNTs device is capable of operating in nW range. On the foundation of these measurements, we aim to prove EG-CNTs as a promising material for future applications in nano-sensing.

Reprint Address:
Han, XL, Brewer Sci Inc, Rolla, MO USA.

Research Institution addresses:
[Ouyang, Mengxing; Sin, Mandy L. Y.; Chow, Gary C. T.; Li, Wen J.] Chinese Univ Hong Kong, Dept Mech & Automat Engn, Ctr Micro & Nanosyst, Shatin, Hong Kong, Peoples R China

Cited References:
BARONE PW, 2005, NAT MATER, V4, P86, DOI 10.1038/nmat1276.
CHEN Z, 2005, SENS LETT, V3, P274, DOI 10.1166/sl.2005.045.
DRESSELHAUS MS, 1992, NATURE, V358, P195.
FUNG CMKM, 2004, IEEE T NANOTECHNOL, V3, P395, DOI 10.1109/TNANO.2004.834156.
GHOSH S, 2003, SCIENCE, V299, P1042, DOI 10.1126/science.1079080.
HAN X, 2006, FLEXIBLE THIN FILM T.
IIJIMA S, 1991, NATURE, V354, P56.
KONG J, 2000, SCIENCE, V287, P622.
MEYYAPPAN M, 2005, CARBON NANOTUBES SCI, P6.
NA PS, 2005, APPL PHYS LETT, V87, P44.
NAEEMI A, 2007, IEEE ELECTR DEVICE L, V28, P135, DOI 10.1109/LED.2006.889240.
NAEEMI A, 2007, P INT S PHYS DES, P77.
REICH S, 2004, CARBON NANOTUBES BAS, P3.
VARGHESE OK, 2001, SENSOR ACTUAT B-CHEM, V81, P32.
VICTOR TS, 2003, IEEE ICRA, V3, P3648.
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ZAHAB A, 2000, PHYS REV B, V62, P10000.

Cited Reference Count:
18

Times Cited:
0

Publisher:
IEEE; 345 E 47TH ST, NEW YORK, NY 10017 USA

IDS Number:
BIO98

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