Friday, June 11, 2010

ISI Web of Knowledge Alert - Ghosh, S

ISI Web of Knowledge Citation Alert

Cited Article: Ghosh, S. Carbon nanotube flow sensors
Alert Expires: 09 NOV 2010
Number of Citing Articles: 2 new records this week (2 in this e-mail)
Organization ID: 3b97d1bbc1878baed0ab183d8b03130b
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Title:
High Sensitivity Carbon Nanotubes Flow-Rate Sensors and Their Performance Improvement by Coating

Authors:
Yang, X; Zhou, ZY; Wang, DQ; Liu, XL

Author Full Names:
Yang, Xing; Zhou, Zhaoying; Wang, Dingqu; Liu, Xiaoli

Source:
SENSORS 10 (5): 4898-4906 MAY 2010

Language:
English

Document Type:
Article

Author Keywords:
flow-rate sensor; carbon nanotube; hysterisis error; coating

Abstract:
A new type of hot-wire flow-rate sensor (HWFS) with a sensing element made of a macro-sized carbon nanotube (CNT) strand is presented in this study. An effective way to improve repeatability of the CNT flow-rate sensor by coating a layer of Al2O3 on the CNT surface is proposed. Experimental results show that due to the large surface-to-volume ratio and thin coated Al2O3 layer, the CNT flow-rate sensor has higher sensitivity and faster response than a conventional platinum (Pt) HWFS. It is also demonstrated that the covered CNT flow-rate sensor has better repeatability than its bare counterpart due to insulation from the surrounding environment. The proposed CNT flow-rate sensor shows application potential for high-sensitivity measurement of flow rate.

Reprint Address:
Yang, X, Tsinghua Univ, Dept Precis Instruments & Mechanol, MEMS Lab, Beijing 100084, Peoples R China.

Research Institution addresses:
[Yang, Xing; Zhou, Zhaoying; Wang, Dingqu; Liu, Xiaoli] Tsinghua Univ, Dept Precis Instruments & Mechanol, MEMS Lab, Beijing 100084, Peoples R China; [Yang, Xing; Zhou, Zhaoying; Wang, Dingqu; Liu, Xiaoli] Tsinghua Univ, State Key Lab Precis Measurement Technol & Instru, Beijing 100084, Peoples R China

E-mail Address:
yangxing@tsinghua.edu.cn; zhouzy@tsinghua.edu.cn; wangdq@tsinghua.edu.cn; liuxiaoli09@163.com

Cited References:
BENJAMIN M, 2007, IEEE SENS J, V7, P266.
BRUUN HH, 1995, HOT WIRE ANEMOMETRY, P7.
COLLINS PG, 2000, SCIENCE, V287, P1801.
GAO YH, 2003, APPL PHYS LETT, V83, P2913, DOI 10.1063/1.1616201.
GHOSH S, 2003, SCIENCE, V299, P1042, DOI 10.1126/science.1079080.
JACK C, 2003, J MICROELEC SYST, V12, P979.
KEAT GO, 2001, SENSORS, V1, P193.
KENZO M, 2009, SENSORS, V9, P5368.
LI CY, 2004, NANOTECHNOLOGY, V15, P1493, DOI 10.1088/0957-4484/15/11/021.
LI J, 2003, NANO LETT, V3, P929, DOI 10.1021/nl034220x.
LIU LT, 2009, SENSORS-BASEL, V9, P1714, DOI 10.3390/s90301714.
MAHANANDIA P, 2008, REV SCI INSTRUM, V79, UNSP 053909-1-053909-5.
PAN ZW, 1999, APPL PHYS LETT, V74, P3152.
PERRY AE, 1982, HOT WIRE ANEMOMETER, P19.
SHAH RA, 2008, SENSORS, V8, P8423.
SOFIA S, 2003, ANAL BIOANAL CHEM, V375, P103.
STAMPFER C, 2006, NANO LETT, V6, P233, DOI 10.1021/nl052171d.
VICTOR TS, 2003, P INT C IEEE MEMS, P41.
WEI JQ, 2004, J PHYS CHEM B, V108, P8844, DOI 10.1021/jp049434x.
WU J, 2008, SENSORS-BASEL, V8, P7085, DOI 10.3390/s8117085.
ZHANG YS, 2005, SENSOR ACTUAT A-PHYS, V120, P142, DOI 10.1016/j.sna.2004.11.032.
ZHOU ZY, 1986, FUNDAMENTALS TEMPERA, P377.
ZHU LB, 2006, CARBON, V44, P253, DOI 10.1016/j.carbon.2005.07.037.

Cited Reference Count:
23

Times Cited:
0

Publisher:
MOLECULAR DIVERSITY PRESERVATION INTERNATIONAL-MDPI; KANDERERSTRASSE 25, CH-4057 BASEL, SWITZERLAND

Subject Category:
Chemistry, Analytical; Electrochemistry; Instruments & Instrumentation

ISSN:
1424-8220

DOI:
10.3390/s100504898

IDS Number:
601YV

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*Record 2 of 2.
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Title:
Synthesis of Vertically Aligned Carbon Nanotube Arrays by Injection Method in CVD

Authors:
Padya, B; Prabhakar, KVP; Jain, PK

Author Full Names:
Padya, Balaji; Prabhakar, K. V. P.; Jain, P. K.

Source:
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY 10 (8): 4960-4966 AUG 2010

Language:
English

Document Type:
Article

Author Keywords:
Carbon Nanotubes; Arrays; Chemical Vapor Deposition (CVD); Injection Method; Scanning Electron Microscopy (SEM)

KeyWords Plus:
FIELD-EMISSION; ELECTRONIC-STRUCTURE; GRAPHENE TUBULES; BUNDLES; GROWTH; INTEGRATION; PYROLYSIS; SENSORS

Abstract:
The well aligned multiwalled carbon nanotube arrays were synthesized by injecting the acetonitrile-ferrocene solution at regular intervals of time. The carbon nanotube arrays were deposited on quartz substrate which is placed at the centre of the CVD reactor in quartz tube. The injection method in chemical vapor deposition allows-excellent control of the catalyst to carbon ratio which facilitates the better growth of aligned carbon nanotubes. The effect of various reaction parameters such as growth temperature, catalyst concentration, gas flow rate, growth time and substrate surface on growth of carbon nanotubes have been studied. It was observed that the diameter of carbon nanotubes increases with increase in catalyst concentration and temperature of the synthesis. The SEM analysis reveals that the average growth rate of carbon nanotube film synthesis was about 1.1 mu m/min when the synthesis time was one hour.

Reprint Address:
Jain, PK, Int Adv Res Ctr Powder Met & New Mat ARCI, Ctr Carbon Mat, Hyderabad 500005, Andhra Pradesh, India.

Research Institution addresses:
[Padya, Balaji; Prabhakar, K. V. P.; Jain, P. K.] Int Adv Res Ctr Powder Met & New Mat ARCI, Ctr Carbon Mat, Hyderabad 500005, Andhra Pradesh, India

Cited References:
ANDREWS R, 1999, CHEM PHYS LETT, V303, P467.
AVOURIS P, 2002, ACCOUNTS CHEM RES, V35, P1026, DOI 10.1021/ar010152e.
BETHUNE DS, 1993, NATURE, V363, P605.
CAO AY, 2001, CHEM PHYS LETT, V344, P13.
CHEN KJ, 2001, IEEE ELECTR DEVICE L, V22, P516.
DAI HJ, 2002, ACCOUNTS CHEM RES, V35, P1035, DOI 10.1021/ar0101640.
DALTON AB, 2003, NATURE, V423, P703.
FAN SS, 1999, SCIENCE, V283, P512.
GHOSH S, 2003, SCIENCE, V299, P1042, DOI 10.1126/science.1079080.
GRUJICIC M, 2005, APPL SURF SCI, V246, P290, DOI 10.1016/j.apsusc.2004.11.030.
HAMADA N, 1992, PHYS REV LETT, V8, P1579.
HEINZE S, 2002, PHYS REV LETT, V89, ARTN 106801.
IWAI T, 2007, FUJITSU SCI TECH J, V43, P508.
JONGE ND, 2002, NATURE, V420, P369.
KONG J, 2000, SCIENCE, V287, P622.
LI WZ, 1996, SCIENCE, V274, P1701.
LIJIMA S, 1991, NATURE, V354, P56.
MAMEDOV AA, 2002, NAT MATER, V1, P190, DOI 10.1038/nmat747.
MAYNE M, 2001, CHEM PHYS LETT, V338, P101.
MINTMIRE JW, 1992, PHYS REV LETT, V68, P631.
NILSSON L, 2000, APPL PHYS LETT, V76, P207.
PAN ZW, 1998, NATURE, V394, P631.
REN ZF, 1998, SCIENCE, V282, P1105.
RINZLER AG, 1995, SCIENCE, V269, P1550.
SADEGHIAN Z, 2008, NANOTECHNOLOGY, V19, ARTN 245612.
SAITO R, 1992, APPL PHYS LETT, V60, P2204.
SAITO R, 1992, PHYS REV B, V46, P1804.
SAITO Y, 2000, CARBON, V38, P169.
SATIO R, 1997, SCIENCE, V286, P1127.
SATISHKUMAR BC, 1999, CHEM PHYS LETT, V307, P158.
SINGH C, 2003, CARBON, V41, P359.
TERRONES M, 1997, NATURE, V388, P52.
TIPRIGAN O, 2007, J OPTOELECTRON ADV M, V9, P617.
YADAV RM, 2005, J NANOSCI NANOTECHNO, V5, P820, DOI 10.1166/jnn.2005.102.
YADAV RM, 2009, NANOSCALE RES LETT, V4, P197, DOI 10.1007/s11671-008-9225-2.
ZHOU O, 2002, ACCOUNTS CHEM RES, V35, P1045, DOI 10.1021/ar010162f.
ZHU HW, 2002, SCIENCE, V296, P884.

Cited Reference Count:
37

Times Cited:
0

Publisher:
AMER SCIENTIFIC PUBLISHERS; 25650 NORTH LEWIS WAY, STEVENSON RANCH, CA 91381-1439 USA

Subject Category:
Chemistry, Multidisciplinary; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary; Physics, Applied; Physics, Condensed Matter

ISSN:
1533-4880

DOI:
10.1166/jnn.2010.2427

IDS Number:
601JV

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