Cited Article: Ghosh, S. Carbon nanotube flow sensors
Alert Expires: 22 OCT 2009
Number of Citing Articles: 2 new records this week (2 in this e-mail)
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Title:
The channel length effect on the electrical performance of suspended-single-wall-carbon-nanotube-based field effect transistors
Authors:
Aissa, B; El Khakani, MA
Author Full Names:
Aissa, B.; El Khakani, M. A.
Source:
NANOTECHNOLOGY 20 (17): Art. No. 175203 APR 29 2009
Language:
English
Document Type:
Article
KeyWords Plus:
THIN-FILM TRANSISTORS; LOGIC-CIRCUITS; GROWTH; NETWORKS; MOBILITY; RESISTANCE; CHIRALITY; SENSORS; ARRAYS
Abstract:
We report on the electrical performance of field effect transistor (FET) nanodevices based on suspended single-wall carbon nanotubes (SWCNTs) grown by our 'all-laser' synthesis process. The attractiveness of the proposed approach lies in the combination of standard microfabrication processing with the in situ 'all-laser' localized growth of SWCNTs, offering an affordable way of directly integrating SWCNTs into nanodevices. The 'all-laser' process uses the same KrF excimer laser (248 nm), first, to deposit the nanocatalyzed electrodes and, in a second step, to grow the SWCNTs in a suspended geometry, achieving thereby the lateral bridging of the electrodes. The nanocatalyzed electrodes consist of a multilayer stack sandwiching a catalyst nanolayer (similar to 5 nm thick) composed of Co/Ni nanoparticles. The 'all-laser' grown SWCNTs (similar to 1 nm diameter) are most often seen to self-assemble into bundles (10-20 nm diameter) and to bridge laterally the various gap lengths (!
in the 2-10 mu m investigation range) separating adjacent electrodes. The suspended-SWCNT-based FETs were found to behave as p-type transistors, in air and at room temperature, with very high ON/OFF switching ratios (whose magnitude markedly increases as the active channel length is reduced). For the shortest gap (i.e. 2 mu m), the suspended-SWCNT-based FETs exhibited not only an ON/OFF switching ratio in excess of seven orders of magnitude, but also an ON-state conductance as high as 3.26 mu S. Their corresponding effective carrier mobility was estimated (at V-SD = 100 mV) to a value of similar to 4000 cm(2) V-1 s(-1), which is almost ten times higher than the hole mobility in single-crystal silicon at room temperature.
Reprint Address:
El Khakani, MA, INRS Energie Mat & Telecommun, Inst Natl Rech Sci, 1650 Blvd Lionel Boulet,CP 1020, Varennes, PQ J3X 1S2, Canada.
Research Institution addresses:
[Aissa, B.; El Khakani, M. A.] INRS Energie Mat & Telecommun, Inst Natl Rech Sci, Varennes, PQ J3X 1S2, Canada
E-mail Address:
elkhakani@emt.inrs.ca
Cited References:
APPENZELLER J, 2004, PHYS REV LETT, UNSP 93196805.
ARTUKOVIC E, 2005, NANO LETT, V5, P757, DOI 10.1021/nl0505254o.
AUSTING DG, 2007, APPL PHYS LETT, V90, ARTN 103112.
AVOURIS P, 2002, PHYSICA B, V323, P6.
BACHTOLD A, 2001, SCIENCE, V294, P1317.
BANDOW S, 1998, PHYS REV LETT, V80, P3779.
BLANCHET GB, 2004, APPL PHYS LETT, V84, P296, DOI 10.1063/1.1639937.
BURGHARD M, 2005, SURF SCI REP, V58, P1, DOI 10.1016/j.surfrep.2005.07.001.
CAO Q, 2006, APPL PHYS LETT, V88, ARTN 113511.
CAO Q, 2007, APPL PHYS LETT, V90, ARTN 023516.
CAO Q, 2008, NANO RES, V1, P259.
CASTRUCCI P, 2004, APPL PHYS LETT, V85, P3857, DOI 10.1063/1.1809277.
CHEN CX, 2007, CARBON, V45, P436, DOI 10.1016/j.carbon.2006.08.021.
CHEN J, 2005, APPL PHYS LETT, V86, ARTN 123108.
CHEN Z, 2005, NANO LETT, V5, P149.
CHEN ZH, 2008, IEEE ELECTR DEVICE L, V29, P183, DOI 10.1109/LED.2007.914069.
DURKOP T, 2004, NANO LETT, V4, P35, DOI 10.1021/nl034841q.
ELKHAKANI MA, 2004, NANOTECHNOLOGY, V15, S534, DOI 10.1088/0957-4484/15/10/007.
ELKHAKANI MA, 2006, IEEE T NANOTECHNOL, V5, P237, DOI 10.1109/TNANO.2006.874043.
FUHRER MS, 2002, NANO LETTERS, V2, P755.
GHOSH S, 2003, SCIENCE, V299, P1042, DOI 10.1126/science.1079080.
GILES P, 2004, NANO LETT, V4, P927.
GUO XF, 2005, J AM CHEM SOC, V127, P15045.
HAZANI M, 2004, APPL PHYS LETT, V85, P5025, DOI 10.1063/1.1823017.
HU YF, 2007, APPL PHYS LETT, V90, ARTN 223116.
HUR SH, 2005, APPL PHYS LETT, V86, ARTN 243502.
JAVEY A, 2002, NAT MATER, V1, P241, DOI 10.1038/nmat769.
JAVEY A, 2003, NATURE, V424, P654, DOI 10.1038/nature01797.
JAVEY A, 2004, NANO LETT, V4, P1319, DOI 10.1021/nl049222b.
JORIO A, 2005, PHYS REV B, V72, ARTN 075207.
KO H, 2006, NANO LETT, V6, P1443, DOI 10.1021/nl060608r.
KOCABAS C, 2006, J AM CHEM SOC, V128, P4540, DOI 10.1021/ja0603150.
KONG J, 2000, SCIENCE, V287, P622.
LEE JU, 2007, APPL PHYS LETT, V90, ARTN 053103.
LI XL, 2005, APPL PHYS LETT, V87, ARTN 243102.
LI YM, 2004, NANO LETT, V4, P317, DOI 10.1021/nl035097c.
LIU X, 2006, APPL PHYS LETT, V89, UNSP 163512.
LIU XL, 2001, APPL PHYS LETT, V79, P3329.
MARTEL R, 1998, APPL PHYS LETT, V73, P2447.
MARTEL R, 2001, PHYS REV LETT, UNSP 256805.
MISEWICH JA, 2003, SCIENCE, V300, P783.
MIZUTANI T, 2008, J PHYS CONF SER, V109, ARTN 012002.
NOSHO Y, 2007, NANOTECHNOLOGY, V18, ARTN 415202.
NOVAK JP, 2004, SOLID STATE ELECTRON, V48, P1753, DOI 10.1016/j.sse.2004.05.010.
OHNO Y, 2004, APPL PHYS LETT, V84, P1368, DOI 10.1063/1.1650554.
OZEL T, 2005, NANO LETT, V5, P905, DOI 10.1021/nl0503781.
PUREWAL MS, 2007, PHYS REV LETT, V98, ARTN 186808.
SCHINDLER A, 2007, PHYSICA E, V37, P119, DOI 10.1016/j.physe.2006.07.016.
SHIM M, 2001, J AM CHEM SOC, V123, P11512.
SHIRAISHI M, 2004, CHEM PHYS LETT, V394, P110, DOI 10.1016/j.cplett.2004.06.130.
SNOW ES, 2003, APPL PHYS LETT, V82, P2145, DOI 10.1063/1.1564291.
STREETMAN BG, 2006, SOLID STATE ELECT DE.
TAKENOBU T, 2006, APPL PHYS LETT, V88, ARTN 033511.
TERSOFF J, 2005, APPL PHYS LETT, V86, ARTN 263108.
TRANS SJ, 1998, NATURE, V393, P49.
TU R, 2007, NANO LETT, V7, P1561, DOI 10.1021/nl070378w.
WANG XR, 2008, PHYS REV LETT, V100, ARTN 206803.
WIND SJ, 2002, APPL PHYS LETT, V80, P3817.
WIND SJ, 2003, PHYS REV LETT, V91, ARTN 058301.
ZHANG M, 2006, APPL PHYS LETT, V89, ARTN 023116.
Cited Reference Count:
60
Times Cited:
0
Publisher:
IOP PUBLISHING LTD; DIRAC HOUSE, TEMPLE BACK, BRISTOL BS1 6BE, ENGLAND
Subject Category:
Engineering, Multidisciplinary; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary; Physics, Applied
ISSN:
0957-4484
DOI:
10.1088/0957-4484/20/17/175203
IDS Number:
429WK
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Title:
Manipulating Biomolecules with Aqueous Liquids Confined within Single-Walled Nanotubes
Authors:
Xiu, P; Zhou, B; Qi, WP; Lu, HJ; Tu, YS; Fang, HP
Author Full Names:
Xiu, Peng; Zhou, Bo; Qi, Wenpeng; Lu, Hangjun; Tu, Yusong; Fang, Haiping
Source:
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY 131 (8): 2840-2845 MAR 4 2009
Language:
English
Document Type:
Article
KeyWords Plus:
DIP-PEN NANOLITHOGRAPHY; CARBON NANOTUBES; WATER CHANNEL; MASS-TRANSPORT; PROTEIN; MEMBRANES; PEPTIDE; ICE; SIMULATIONS; SOLVATION
Abstract:
Confinement of molecules inside nanoscale pores has become an important method for exploiting new dynamics not happening in bulk systems and for fabricating novel structures. Molecules that are encapsulated in nanopores are difficult to control with respect to their position and activity. On the basis of molecular dynamics simulations, we have achieved controllable manipulation, both in space and time, of biomolecules with aqueous liquids inside a single-walled nanotube by using an external charge or a group of external charges. The remarkable manipulation abilities are attributed to the single-walled structure of the nanotube that the electrostatic interactions of charges inside and outside the single-walled nanotube are strong enough, and the charge-induced dipole-orientation ordering of water confined in the nanochannel so that water has a strong interaction with the external charge. These designs are expected to serve as lab-in-nanotube for the interactions and chemical !
reactions of molecules especially biomolecules, and have wide applications in nanotechnology and biotechnology.
Reprint Address:
Fang, HP, Chinese Acad Sci, Shanghai Inst Appl Phys, POB 800-204, Shanghai 201800, Peoples R China.
Research Institution addresses:
[Xiu, Peng; Zhou, Bo; Qi, Wenpeng; Lu, Hangjun; Tu, Yusong; Fang, Haiping] Chinese Acad Sci, Shanghai Inst Appl Phys, Shanghai 201800, Peoples R China; [Xiu, Peng; Qi, Wenpeng] Shandong Univ, Sch Phys, Jinan 250100, Peoples R China; [Zhou, Bo; Tu, Yusong] Chinese Acad Sci, Grad Sch, Beijing 100080, Peoples R China; [Lu, Hangjun] Zhejiang Normal Univ, Dept Phys, Jinhua 321004, Peoples R China; [Fang, Haiping] CAS, Theoret Phys Ctr Sci Facil, Beijing 100049, Peoples R China
E-mail Address:
fanghaiping@sinap.ac.cn
Cited References:
BALBACH JJ, 2000, BIOCHEMISTRY-US, V39, P13748.
BALL P, 2008, CHEM REV, V108, P74, DOI 10.1021/cr068037a.
BESTEMAN K, 2003, NANO LETT, V3, P727, DOI 10.1021/nl034139u.
BONOMI M, 2007, BIOPHYS J, V93, P2813, DOI 10.1529/biophysj.107.106369.
BOURLON B, 2007, NAT NANOTECHNOL, V2, P104, DOI 10.1038/nnano.2006.211.
DARDEN T, 1993, J CHEM PHYS, V98, P10089.
DEGROOT BL, 2003, J MOL BIOL, V333, P279, DOI 10.1016/j.jmb.2003.08.003.
DOKTER AM, 2005, J PHYS REV LETT, V94, UNSP 178301.
EGGERS DK, 2001, PROTEIN SCI, V10, P250.
FAN R, 2005, PHYS REV LETT, V95, ARTN 086607.
GHOSH S, 2003, SCIENCE, V299, P1042, DOI 10.1126/science.1079080.
GINGER DS, 2004, ANGEW CHEM INT EDIT, V43, P30, DOI 10.1002/anie.200300608.
GONG XJ, 2007, NAT NANOTECHNOL, V2, P709, DOI 10.1038/nnano.2007.320.
HO CM, 2001, PROC IEEE MICR ELECT, P375.
HOLT JK, 2006, SCIENCE, V312, P1034, DOI 10.1126/science.1126298.
HORINEK D, 2008, P NATL ACAD SCI USA, V105, P2842, DOI 10.1073/pnas.0707879105.
HU J, 1996, J VAC SCI TECHNOL B, V14, P1341.
HUMMER G, 2001, NATURE, V414, P188.
INSEPOV Z, 2006, NANO LETT, V6, P1893, DOI 10.1021/nl060932m.
JORGENSEN WL, 1983, J CHEM PHYS, V79, P926.
JORGENSEN WL, 1996, J AM CHEM SOC, V118, P11225.
JU SP, 2006, J PHYS CHEM B, V110, P9286, DOI 10.1021/jp056567p.
KOGA K, 2001, NATURE, V412, P802.
KRAL P, 1999, PHYS REV LETT, V82, P5373.
LI JC, 1993, NATURE, V365, P327.
LI JY, 2007, P NATL ACAD SCI USA, V104, P3687, DOI 10.1073/pnas.0604541104.
LINDAHL E, 2001, J MOL MODEL, V7, P306.
LONGHURST MJ, 2007, NANO LETT, V7, P3324, DOI 10.1021/nl071537e.
LOONG CK, 2004, NANOTECHNOLOGY, V15, S664.
LUCENT D, 2007, P NATL ACAD SCI USA, V104, P10430, DOI 10.1073/pnas.0608256104.
MASHL RJ, 2003, NANO LETT, V3, P589, DOI 10.1021/nl0340226.
NELSON R, 2005, NATURE, V435, P773, DOI 10.1038/nature03680.
NOON WH, 2002, CHEM PHYS LETT, V355, P445.
OKADA T, 2006, CHEM PHYS LETT, V417, P288, DOI 10.1016/j.cplett.2005.10.030.
PAN XL, 2007, NAT MATER, V6, P507, DOI 10.1038/nmat1916.
PINER RD, 1999, SCIENCE, V283, P661.
RAO PVG, 2007, LANGMUIR, V23, P12795, DOI 10.1021/la7022902.
REGAN BC, 2004, NATURE, V428, P924, DOI 10.1038/nature02496.
SAVARIAR EN, 2008, NAT NANOTECHNOL, V3, P112, DOI 10.1038/nnano.2008.6.
SHIN K, 2007, NAT MATER, V6, P961, DOI 10.1038/nmat2031.
SISTIABUDI R, 2007, J PHYS CHEM C, V111, P11676, DOI 10.1021/jp072757j.
SIWY Z, 2002, PHYS REV LETT, V89, ARTN 198103.
SORIN EJ, 2006, J AM CHEM SOC, V128, P6316, DOI 10.1021/ja060917j.
STRIOLO A, 2006, NANO LETT, V6, P633, DOI 10.1021/nl052254u.
SUN L, 2000, J AM CHEM SOC, V122, P12340, DOI 10.1021/ja002429w.
SYKES MT, 2007, P NATL ACAD SCI USA, V104, P12336, DOI 10.1073/pnas.0705573104.
TAJKHORSHID E, 2002, SCIENCE, V296, P525.
TANG J, 2008, LANGMUIR, V24, P4975, DOI 10.1021/1a800329k.
VAITHEESWARAN S, 2006, J AM CHEM SOC, V128, P13490, DOI 10.1021/ja063445h.
VERDAGUER A, 2006, CHEM REV, V106, P1478, DOI 10.1021/cr040376l.
WAN RZ, 2005, J AM CHEM SOC, V127, P7166, DOI 10.1021/ja050044d.
WANG BY, 2006, J AM CHEM SOC, V128, P15984, DOI 10.1021/ja066431k.
WANG BY, 2007, PHYS REV LETT, V98, ARTN 266102.
WANG ZK, 2007, NANO LETT, V7, P697, DOI 10.1021/nl062853g.
WIERZBINSKI E, 2006, LANGMUIR, V22, P2426, DOI 10.1021/la053224+.
WON CY, 2007, J AM CHEM SOC, V129, P2748, DOI 10.1021/ja0687318.
YANG HQ, 2007, ANGEW CHEM INT EDIT, V46, P6861, DOI 10.1002/anie.200701747.
YEH IC, 2004, P NATL ACAD SCI USA, V101, P12177, DOI 10.1073/pnas.0402699101.
ZHANG SQ, 2007, NANO LETT, V7, P3438, DOI 10.1021/n1071948v.
ZHAO YC, 2008, ADV MATER, V20, P1772, DOI 10.1002/adma.200702956.
ZHOU RH, 2004, SCIENCE, V305, P1605.
ZIMMERLI U, 2008, BIOPHYS J, V94, P2546, DOI 10.1529/biophysj.106.102467.
Cited Reference Count:
62
Times Cited:
0
Publisher:
AMER CHEMICAL SOC; 1155 16TH ST, NW, WASHINGTON, DC 20036 USA
Subject Category:
Chemistry, Multidisciplinary
ISSN:
0002-7863
DOI:
10.1021/ja804586w
IDS Number:
427PX
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