Cited Article: Ghosh, S. Carbon nanotube flow sensors
Alert Expires: 09 NOV 2010
Number of Citing Articles: 1 new records this week (1 in this e-mail)
Organization ID: 3b97d1bbc1878baed0ab183d8b03130b
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Title:
Batch-processed carbon nanotube wall as pressure and flow sensor
Authors:
Choi, J; Kim, J
Author Full Names:
Choi, Jungwook; Kim, Jongbaeg
Source:
NANOTECHNOLOGY 21 (10): Art. No. 105502 MAR 12 2010
Language:
English
Document Type:
Article
KeyWords Plus:
FABRICATION; GROWTH; SENSITIVITY; DEVICES; SYSTEMS; FORCE; NO2
Abstract:
A pressure and flow sensor based on the electrothermal-thermistor effect of a batch-processed carbon nanotube wall (CNT wall) is presented. The negative temperature coefficient of resistance (TCR) of CNTs and the temperature dependent tunneling rate through the CNT/silicon junction enable vacuum pressure and flow velocity sensing because the heat transfer rate between CNTs and the surrounding gas molecules differs depending on pressure and flow rate. The CNT walls are synthesized by thermal chemical vapor deposition (CVD) on an array of microelectrodes fabricated on a silicon-on-insulator (SOI) wafer. The CNTs are self-assembled between the microelectrodes and substrate across the thickness of a buried oxide layer during the synthesis process, and the simple batch fabrication results in high throughput and yield. A wide pressure range, down to 3 x 10(-3) from 10(5) Pa, and a nitrogen flow velocity range between 1 and 52.4 mm s(-1), are sensed. Further experimental characteri!
zations of the bias voltage dependent response of the sensor as a vacuum pressure gauge are presented.
Reprint Address:
Kim, J, Yonsei Univ, Sch Mech Engn, 262 Seongsanno, Seoul 120749, South Korea.
Research Institution addresses:
[Choi, Jungwook; Kim, Jongbaeg] Yonsei Univ, Sch Mech Engn, Seoul 120749, South Korea
E-mail Address:
kimjb@yonsei.ac.kr
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Cited Reference Count:
55
Times Cited:
0
Publisher:
IOP PUBLISHING LTD; DIRAC HOUSE, TEMPLE BACK, BRISTOL BS1 6BE, ENGLAND
Subject Category:
Engineering, Multidisciplinary; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary; Physics, Applied
ISSN:
0957-4484
DOI:
10.1088/0957-4484/21/10/105502
IDS Number:
556ET
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