Cited Article: Majumder M. Nanoscale hydrodynamics - Enhanced flow in carbon nanotubes
Alert Expires: 09 NOV 2010
Number of Citing Articles: 3 new records this week (3 in this e-mail)
Organization ID: 3b97d1bbc1878baed0ab183d8b03130b
========================================================================
Note: Instructions on how to purchase the full text of an article and Help Desk Contact information are at the end of the e-mail.
========================================================================
*Record 1 of 3.
*View Full Record: http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Alerting&SrcApp=Alerting&DestApp=WOS&DestLinkType=FullRecord;KeyUT=000274578700008
*Order Full Text [ ]
Title:
Retardation of Liquid Indium Flow in Indium Oxide Nanotubes
Authors:
Kumar, M; Singh, VN; Mehta, BR; Singh, JP
Author Full Names:
Kumar, Mukesh; Singh, Vidya N.; Mehta, Bodh R.; Singh, Jitendra P.
Source:
JOURNAL OF PHYSICAL CHEMISTRY C 114 (7): 2891-2895 FEB 25 2010
Language:
English
Document Type:
Article
KeyWords Plus:
CARBON NANOTUBES; FLUID-FLOW; TEMPERATURE; NANOTHERMOMETER; SOLUBILITY; TRANSPORT; METALS; WATER
Abstract:
High-resolution transmission electron microscopy and energy-dispersive X-ray analysis carried out oil indium oxide nanotubes grown by a chemical vapor deposition technique show the presence of indium metal segments along the indium oxide (IO) nanotube axis having one end closed. A real-time HRTEM video In continuous mode imaging has been carried Out to study the directional now of liquid indium. Electron-beam-induced heating results in the increase ill indium vapor pressure and desorption of gases at the closed end of the IO nanotubes. This buildup of differential pressure between open and closed columns leads to the now of indium away from the closed end of the IO nanotube. Interestingly, the indium flow rate was observed to decrease from 2.8 to 0.3 nm/s with a corresponding decrease in the nanotubes' diameter from 138 to 38 nm. This Study indicates that the wetting properties of the liquid-host nanotube interface critically decides the fluid dynamics at nanoscale, and depe!
nding upon the interfacial properties, enhancement or retardation of flow call be observed oil the reduction of the nanotube diameter.
Reprint Address:
Mehta, BR, Indian Inst Technol Delhi, Dept Phys, New Delhi 110016, India.
Research Institution addresses:
[Kumar, Mukesh; Singh, Vidya N.; Mehta, Bodh R.; Singh, Jitendra P.] Indian Inst Technol Delhi, Dept Phys, New Delhi 110016, India
E-mail Address:
brmehta@physics.iitd.ac.in; jpsingh@physics.iitd.ac.in
Cited References:
BURNS MA, 1998, SCIENCE, V282, P484.
CHEN PC, 2009, APPL PHYS LETT, V94, ARTN 043113.
CHEN X, 2008, NANO LETT, V8, P2988, DOI 10.1021/nl802046b.
CHOPRA KL, 1983, THIN SOLID FILMS, V102, P1.
DONG LX, 2007, NANO LETT, V7, P58, DOI 10.1021/nl061980+.
DU N, 2007, ADV MATER, V19, P1641, DOI 10.1002/adma.200602128.
EBBESEN TW, 1994, ANNU REV MATER SCI, V24, P235.
GAO YH, 2002, NATURE, V415, P599.
GOGOTSI Y, 2001, APPL PHYS LETT, V79, P1021.
GOLDBEG D, 2005, CHEM PHYS LETT, V409, P75.
GONG NW, 2008, APPL PHYS LETT, V92, ARTN 073101.
HOLT JK, 2006, SCIENCE, V312, P1034, DOI 10.1126/science.1126298.
HONG MH, 2000, APPL PHYS LETT, V77, P2604.
HU JQ, 2008, ACS NANO, V2, P107, DOI 10.1021/nn700285d.
HUMMER G, 2001, NATURE, V414, P188.
KIM YT, 2004, APPL PHYS LETT, V87, UNSP 234106.
KONO S, 1999, SURF SCI, V420, P200.
KOREN HW, 1970, REV SCI INSTRUM, V41, P468.
KUMAR M, 2009, APPL PHYS LETT, V95, ARTN 013102.
KUMAR M, 2009, NANOTECHNOLOGY, V20, ARTN 235608.
LI C, 2004, APPL PHYS LETT, V84, P1949, DOI 10.1063/1.1667615.
LI YB, 2003, ADV MATER, V15, P581.
LI YB, 2003, APPL PHYS LETT, V83, P999, DOI 10.1063/1.1597422.
LIDE DR, 1990, HDB CHEM PHYS.
LIU M, 1994, SCANNING, V16, P1.
MAJUMDER M, 2005, NATURE, V438, P44, DOI 10.1038/43844a.
MANI RC, 2003, NANO LETT, V3, P671, DOI 10.1021/nl034125o.
MATTIA D, 2008, MICROFLUID NANOFLUID, V5, P289, DOI 10.1007/s10404-008-0293-5.
OTSUKA S, 1984, METALL TRANS B, V15, P329.
REGAN BC, 2004, NATURE, V428, P924, DOI 10.1038/nature02496.
ROSSI MP, 2004, NANO LETT, V4, P989, DOI 10.1021/nl049688u.
SHPILRAIN EE, 2002, HIGH TEMP+, V40, P825.
SVENSSON K, 2004, PHYS REV LETT, V93, ARTN 145901.
TANG LQ, 2008, CHEM ENG J, V139, P642, DOI 10.1016/j.cej.2008.01.027.
TUZUN RE, 1996, NANOTECHNOLOGY, V7, P241.
UGARTE D, 1996, SCIENCE, V274, P1897.
WAN Q, 2006, NANO LETT, V6, P2909, DOI 10.1021/nl062213d.
WANG B, 2006, NANOTECHNOLOGY, V17, P5916, DOI 10.1088/0957-4484/17/24/003.
WHITBY M, 2008, NANO LETT, V8, P2632, DOI 10.1021/nl080705f.
ZHONG M, 2008, APPL PHYS LETT, V92, ARTN 093118.
Cited Reference Count:
40
Times Cited:
0
Publisher:
AMER CHEMICAL SOC; 1155 16TH ST, NW, WASHINGTON, DC 20036 USA
Subject Category:
Chemistry, Physical; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary
ISSN:
1932-7447
DOI:
10.1021/jp910252f
IDS Number:
556GQ
========================================================================
*Record 2 of 3.
*View Full Record: http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Alerting&SrcApp=Alerting&DestApp=WOS&DestLinkType=FullRecord;KeyUT=000274615600001
*Order Full Text [ ]
Title:
Carbon Nanotubes Anchored to Silicon for Device Fabrication
Authors:
Constantopoulos, KT; Shearer, CJ; Ellis, AV; Voelcker, NH; Shapter, JC
Author Full Names:
Constantopoulos, Kristina T.; Shearer, Cameron J.; Ellis, Amanda V.; Voelcker, Nicolas H.; Shapter, Joseph C.
Source:
ADVANCED MATERIALS 22 (5): 557-571 FEB 2 2010
Language:
English
Document Type:
Review
KeyWords Plus:
CHEMICAL-VAPOR-DEPOSITION; FAST MASS-TRANSPORT; FIELD-EMISSION; POLY(SILYL ESTER)S; MEMBRANE EQUILIBRIA; RAMAN-SPECTROSCOPY; NANOFIBER ARRAYS; MAMMALIAN-CELLS; POROUS SILICON; SINGLE
Abstract:
This report highlights recent progress in the fabrication of vertically aligned carbon nanotubes (VA-CNTs) on silicon-based materials. Research into these nanostructured composite materials is spurred by the importance of silicon as a basis for most current devices and the disruptive properties of CNTs. Various CNT attachments methods of covalent and adsorptive nature are critically compared. Selected examples of device applications where the VA-CNT on silicon assemblies are showing particular promise are discussed. These applications include field emitters, filtration membranes, dry adhesives, sensors and scaffolds for biointerfaces.
Reprint Address:
Shapter, JC, Flinders Univ S Australia, Sch Chem Phys & Earth Sci, GPO Box 2100, Bedford Pk, SA 5042, Australia.
Research Institution addresses:
[Constantopoulos, Kristina T.; Shearer, Cameron J.; Ellis, Amanda V.; Voelcker, Nicolas H.; Shapter, Joseph C.] Flinders Univ S Australia, Sch Chem Phys & Earth Sci, Bedford Pk, SA 5042, Australia
E-mail Address:
joe.shapter@flinders.edu.au
Cited References:
ALLEN BL, 2008, NANO LETT, V8, P3899, DOI 10.1021/nl802315h.
ANDERSON RC, 1993, J ELECTROCHEM SOC, V140, P1393.
AUTUMN K, 2000, NATURE, V405, P681.
BAUGHMAN RH, 2002, SCIENCE, V297, P787.
BECKER M, 1949, PHYS REV, V76, P1531.
BENJACOB E, 2008, J MATER CHEM, V18, P5181, DOI 10.1039/b805878b.
BONARD JM, 1998, APPL PHYS LETT, V73, P918.
BONARD JM, 2002, CARBON, V40, P1715.
BOWER C, 2000, APPL PHYS LETT, V77, P830.
BURIAK JM, 2002, CHEM REV, V102, P1271.
CAI D, 2005, NAT METHODS, V2, P449, DOI 10.1038/NMETH761.
CANHAM L, 1997, PROPERTIES POROUS SI.
CARDENAS JF, 2007, CHEM PHYS LETT, V442, P409, DOI 10.1016/j.cplett.2007.06.030.
CAZACU M, 2006, J ORGANOMET CHEM, V691, P3700, DOI 10.1016/j.jorganchem.2006.05.026.
CHAKRABARTI S, 2008, J PHYS CHEM C, V112, P8136, DOI 10.1021/jp802059t.
CHAMSSEDINE F, 2008, CARBON, V46, P957, DOI 10.1016/j.carbon.2008.03.001.
CHAUFER B, 1996, DESALINATION, V104, P37.
CHEN G, 2002, J NANOSCI NANOTECHNO, V2, P621, DOI 10.1166/jnn.2002.143.
CHEN GH, 2008, NANOTECHNOLOGY, V19, ARTN 415703.
CHEN LF, 2008, J NANOMATER, ARTN 783981.
CHEN X, 2007, P NATL ACAD SCI USA, V104, P8218, DOI 10.1073/pnas.0700567104.
CHENG Y, 2003, CR PHYS, V4, P1021, DOI 10.1016/S1631-0705(03)00103-8.
CHHOWALLA M, 2001, APPL PHYS LETT, V79, P2079.
CHOI KH, 2000, SURF SCI, V462, P195.
CONSTANTOPOULOS KT, 2008, P SPIE.
COOPER SM, 2004, NANO LETT, V4, P377, DOI 10.1021/nl0350682.
CORREADUARTE MA, 2004, NANO LETT, V4, P2233, DOI 10.1021/nl048574f.
CRAIGHEAD HG, 1998, BIOMED MICRODEVICES, V1, P49.
CURRAN SA, 2004, J CHEM PHYS, V120, P4886, DOI 10.1063/1.1644109.
CURRAN SA, 2006, J MATER RES, V21, P1071, DOI 10.1557/JMR.2006.0129.
DAI HJ, 2001, TOP APPL PHYS, V80, P29.
DERVISHI E, 2009, PARTICUL SCI TECHNOL, V27, P107, DOI 10.1080/02726350902775962.
DONNAN FG, 1924, CHEM REV, V1, P73.
DONNAN FG, 1995, J MEMBRANE SCI, V100, P45.
DYKE CA, 2003, NANO LETT, V3, P1215, DOI 10.1021/nl034537x.
ELLIS AV, 2005, CHEM PHYS LETT, V412, P449, DOI 10.1016/j.cplett.2005.07.052.
ELLIS AV, 2006, J CHEM PHYS, V125, ARTN 121103.
ELLIS AV, 2007, CHEM LETT, P36.
ENDO M, 1993, J PHYS CHEM SOLIDS, V54, P1841.
FABRE B, 2008, LANGMUIR, V24, P6595, DOI 10.1021/la800358w.
FAN SS, 1999, SCIENCE, V283, P512.
FAN SS, 2000, PHYSICA E, V8, P179.
FLATT AK, 2005, J AM CHEM SOC, V127, P8918, DOI 10.1021/ja051269r.
FORNASIERO F, 2008, P NATL ACAD SCI USA, V105, P17250, DOI 10.1073/pnas.0710437105.
GABAY T, 2005, PHYSICA A, V350, P611, DOI 10.1016/j.physa.2004.11.007.
GIANNONA S, 2007, J NANOSCI NANOTECHNO, V7, P1679, DOI 10.1166/jnn.2007.454.
GRAUPNER R, 2007, J RAMAN SPECTROSC, V38, P673, DOI 10.1002/jrs.1694.
HARRISON BS, 2007, BIOMATERIALS, V28, P344, DOI 10.1016/j.biomaterials.2006.07.044.
HART AJ, 2007, INT J NANOMANUF, V1, P701.
HATA K, 2004, SCIENCE, V306, P1362.
HAVEL BS, 2007, CARBON, V45, P2551.
HAYASHI T, 2002, NANO LETTERS, V2, P491.
HE JL, 2006, NAT MATER, V5, P63, DOI 10.1038/nmat1526.
HIGASHI GS, 1990, APPL PHYS LETT, V56, P656.
HINDS BJ, 2004, SCIENCE, V303, P62, DOI 10.1126/science.1092048.
HOLT JK, 2004, NANO LETT, V4, P2245, DOI 10.1021/nl048876h.
HOLT JK, 2006, SCIENCE, V312, P1034, DOI 10.1126/science.1126298.
HOMMA Y, 2005, J ELECTRON MICROS S1, V54, I3, DOI 10.1093/jmicro/dfi013.
HUANG XJ, 2007, LANGMUIR, V23, P991, DOI 10.1021/la0631441.
HUMMER G, 2001, NATURE, V414, P188.
IM J, 2006, J PHYS CHEM B, V110, P12839, DOI 10.1021/jp062146b.
IZAK T, 2008, J PHYS C SER, V100, UNSP 072008.
JENSEN KL, 1999, PHYS PLASMAS 2, V6, P2241.
JIANG J, 2005, PHYS REV B, V71, ARTN 045417.
JISHI RA, 1993, CHEM PHYS LETT, V209, P77.
JOSELEVICH E, 2008, TOP APPL PHYS, V111, P101.
KALRA A, 2003, P NATL ACAD SCI USA, V100, P10175.
KAM NWS, 2004, J AM CHEM SOC, V126, P6850, DOI 10.1021/ja0486059.
KAMEYAMA A, 1999, MACROMOLECULES, V32, P1407.
KAMINSKA K, 2007, NANOTECHNOLOGY, V18, ARTN 165707.
KHABASHESKU VN, 2002, ACCOUNTS CHEM RES, V35, P1087, DOI 10.1021/ar020146y.
KIM UJ, 2005, J AM CHEM SOC, V127, P15437, DOI 10.1021/ja052951o.
KIM UJ, 2005, PHYS REV LETT, V95, ARTN 157402.
KIMBALL DB, 2002, ANGEW CHEM INT EDIT, V41, P3338.
KOGA K, 2001, NATURE, V412, P802.
KOLESNIKOV AI, 2004, PHYS REV LETT, V93, ARTN 035503.
KRUPKE R, 2002, NANO LETT, V2, P1161, DOI 10.1021/nl025679e.
LACERDA L, 2007, NANO TODAY, V2, P38.
LI YM, 2001, J PHYS CHEM B, V105, P11424.
LIU C, 2005, J PHYS D APPL PHYS, V38, R231, DOI 10.1088/0022-3727/38/14/R01.
LIU J, 1999, CHEM PHYS LETT, V303, P125.
LIU XM, 2009, CARBON, V47, P500, DOI 10.1016/j.carbon.2008.10.033.
LIU ZF, 2000, LANGMUIR, V16, P3569.
LOBO AO, 2008, MAT SCI ENG C-BIO S, V28, P532, DOI 10.1016/j.msec.2007.04.016.
LU FS, 2009, ADV MATER, V21, P139, DOI 10.1002/adma.200801491.
MAJOR RC, 2006, PHYS REV LETT, V96, ARTN 177803.
MAJUMDER M, 2005, NATURE, V438, P44, DOI 10.1038/43844a.
MAJUMDER M, 2007, LANGMUIR, V23, P8624, DOI 10.1021/la700686k.
MAJUMDER M, 2008, J MEMBRANE SCI, V316, P89, DOI 10.1016/j.memsci.2007.09.068.
MANN D, 2006, CARBON NANOTUBES PRO, P19.
MARTINEZ J, 2005, NANOTECHNOLOGY, V16, P2493, DOI 10.1088/0957-4484/16/11/004.
MARUYAMA S, 2002, CHEM PHYS LETT, V360, P229.
MAWHINNEY DB, 2000, J AM CHEM SOC, V122, P2383.
MCKNIGHT TE, 2003, NANOTECHNOLOGY, V14, P551.
MCKNIGHT TE, 2004, NANO LETT, V4, P1213, DOI 10.1021/nl049504b.
MEYYAPPAN M, 2003, PLASMA SOURCES SCI T, V12, P205.
MISRA A, 2006, DIAM RELAT MATER, V15, P385, DOI 10.1016/j.diamond.2005.08.013.
MURAMATSU H, 2005, CHEM COMMUN 0421, P2002, DOI 10.1039/b416393a.
NAN XL, 2002, J COLLOID INTERF SCI, V245, P311.
NEWTON TA, 1999, SURF SCI, V430, P67.
NGUYENVU TDB, 2006, SMALL, V2, P89, DOI 10.1002/smll.200500175.
NOBUAKI N, 1993, APPL PHYS LETT, V62, P1429.
OCONNELL MJ, 2002, SCIENCE, V297, P593.
PARK JH, 2005, J VAC SCI TECHNOL B, V23, P749, DOI 10.1116/1.1851535.
PASTERNACK RM, 2008, LANGMUIR, V24, P12963, DOI 10.1021/la8024827.
PIETRASS T, 2006, J NANOSCI NANOTECHNO, V6, P135, DOI 10.1166/jnn.2006.058.
PLANK NOV, 2004, MICROELECTRON ENG, V73, P578, DOI 10.1016/j.mee.2004.02.088.
POH ZH, 2009, MATER LETT, V63, P757, DOI 10.1016/j.matlet.2008.12.043.
POLICICCHIO A, 2008, J PHYS C SER, V100, UNSP 052093.
PULIKKATHARA MX, 2008, CHEM MATER, V20, P2685, DOI 10.1021/cm7035037.
QU L, 2007, ADV MATER, V19, P3844, DOI 10.1002/adma.200700023.
QU LT, 2008, NANO LETT, V8, P2682, DOI 10.1021/nl800967n.
QU LT, 2008, SCIENCE, V322, P238, DOI 10.1126/science.1159503.
RANA S, 2009, J REINF PLAST COMP, V28, P461.
REN ZF, 1998, SCIENCE, V282, P1105.
RINZLER AG, 1995, SCIENCE, V269, P1550.
SATISHKUMAR BC, 1996, J PHYS B-AT MOL OPT, V29, P4925.
SAUVAJOL JL, 2006, LECT NOTE PHYS, V677, P277.
SCHAEP J, 1998, SEP PURIF TECHNOL, V14, P155.
SCHMELTZER JM, 2005, CHEM NANOMATERIALS, V1.
SEELABOYINA R, 2008, NANOTECHNOLOGY, V19, ARTN 065605.
SETHI S, 2008, NANO LETT, V8, P822, DOI 10.1021/nl0727765.
SGOBBA V, 2009, CHEM SOC REV, V38, P165, DOI 10.1039/b802652c.
SHEARER CJ, 2008, J MATER CHEM, V18, P5753, DOI 10.1039/b811546j.
SHEARER CJ, 2008, P SPIE SMART MAT 5 N, V7267.
SINGH R, 2005, J AM CHEM SOC, V127, P4388, DOI 10.1021/ja0441561.
SMART SK, 2006, CARBON, V44, P1034, DOI 10.1016/j.carbon.2005.10.011.
SONOGASHIRA K, 1975, TETRAHEDRON LETT, V16, P4467.
STEIN A, 2009, ADV MATER, V21, P265, DOI 10.1002/adma.200801492.
STEPHENS RD, 1963, J ORG CHEM, V28, P3313.
STEVENS JL, 2003, NANO LETT, V3, P331, DOI 10.1021/nl025944w.
STEWART MP, 2000, ADV MATER, V12, P859.
STEWART MP, 2004, J AM CHEM SOC, V126, P370.
STUART BH, 2004, INFRARED SPECTROSCOP.
SUDALAI A, 2000, ORG LETT, V2, P3213, DOI 10.1021/ol006407q.
TANG J, 2005, NANO LETT, V5, P11, DOI 10.1021/nl048803y.
TEO KBK, 2001, APPL PHYS LETT, V79, P1534.
TIAN Y, 2006, P NATL ACAD SCI USA, V103, P19320, DOI 10.1073/pnas.0608841103.
TING JM, 2009, NANOTECHNOLOGY, V20, ARTN 025608.
TUNE DD, CARBON UNPUB.
TUZLAKOGLU K, 2005, J MATER SCI-MATER M, V16, P1099, DOI 10.1007/s10856-005-4713-8.
VAJTAI R, 2007, TOP APPL PHYS, V109, P188.
VANDERWAL RL, 2001, CARBON, V39, P2277.
VEREB G, 2003, P NATL ACAD SCI USA, V100, P8053, DOI 10.1073/pnas.1332550100.
VERWEIJ H, 2007, SMALL, V3, P1996, DOI 10.1002/smll.200700368.
WAGHE A, 2002, J CHEM PHYS, V117, P10789, DOI 10.1063/1.1519861.
WALTHER JH, 2001, J PHYS CHEM B, V105, P9980.
WANG M, 1998, MACROMOLECULES, V31, P7606.
WANG M, 1999, J POLYM SCI POL CHEM, V37, P3606.
WANG QH, 1998, APPL PHYS LETT, V72, P2912.
WANG ZK, 2007, NANO LETT, V7, P697, DOI 10.1021/nl062853g.
WEI BQ, 2002, NATURE, V416, P495.
WIRTH CT, 2008, DIAM RELAT MATER, V17, P1518, DOI 10.1016/j.diamond.2007.11.019.
WONG SS, 1998, NATURE, V394, P52.
WORLEKNIRSCH JM, 2006, NANO LETT, V6, P1261, DOI 10.1021/nl060177c.
YAMADA T, 2006, NAT NANOTECHNOL, V1, P131, DOI 10.1038/nnano.2006.95.
YANG CM, 2006, PHYS REV B, V73, ARTN 075419.
YAQIONG X, 2006, APPL PHYS LETT, V89, UNSP 123116.
YU J, 2008, FULLER NANOTUB CAR N, V16, P18, DOI 10.1080/15363830701779299.
YU JX, 2006, SOFT MATTER, V2, P1081, DOI 10.1039/b611016a.
YU JX, 2007, PHYS CHEM CHEM PHYS, V9, P510, DOI 10.1039/b615096a.
YU JX, 2008, J AM CHEM SOC, V130, P8788, DOI 10.1021/ja801142k.
YUE GZ, 2002, APPL PHYS LETT, V81, P355.
YUN YH, 2006, J PHYS CHEM B, V110, P23920, DOI 10.1021/jp057171g.
ZANGI R, 2003, J CHEM PHYS, V119, P1694, DOI 10.1063/1.1580101.
ZANGI R, 2003, PHYS REV LETT, V91, ARTN 025502.
ZENG LL, 2008, J NANOSCI NANOTECHNO, V8, P1545, DOI 10.1166/jnn.2008.400.
ZHANG GY, 2005, P NATL ACAD SCI USA, V102, P16141, DOI 10.1073/pnas.0507064102.
ZHANG L, 2007, J PHYS CHEM C, V111, P11240, DOI 10.1021/jp0729011.
ZHANG NY, 2002, SMART MATER STRUCT, V11, P962.
ZHANG X, 2005, SENSOR ACTUAT B-CHEM, V106, P843, DOI 10.1016/j.snb.2004.10.039.
ZHENG G, 2007, NANO LETT, V7, P1622, DOI 10.1021/nl070585w.
ZHU W, 1999, APPL PHYS LETT, V75, P873.
Cited Reference Count:
173
Times Cited:
0
Publisher:
WILEY-V C H VERLAG GMBH; PO BOX 10 11 61, D-69451 WEINHEIM, GERMANY
Subject Category:
Chemistry, Multidisciplinary; Chemistry, Physical; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary; Physics, Applied; Physics, Condensed Matter
ISSN:
0935-9648
DOI:
10.1002/adma.200900945
IDS Number:
556TP
========================================================================
*Record 3 of 3.
*View Full Record: http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Alerting&SrcApp=Alerting&DestApp=WOS&DestLinkType=FullRecord;KeyUT=000274635800069
*Order Full Text [ ]
Title:
Dry Contact Transfer Printing of Aligned Carbon Nanotube Patterns and Characterization of Their Optical Properties for Diameter Distribution and Alignment
Authors:
Pint, CL; Xu, YQ; Moghazy, S; Cherukuri, T; Alvarez, NT; Haroz, EH; Mahzooni, S; Doorn, SK; Kono, J; Pasquali, M; Hauge, RH
Author Full Names:
Pint, Cary L.; Xu, Ya-Qiong; Moghazy, Sharief; Cherukuri, Tonya; Alvarez, Noe T.; Haroz, Erik H.; Mahzooni, Salma; Doorn, Stephen K.; Kono, Junichiro; Pasquali, Matteo; Hauge, Robert H.
Source:
ACS NANO 4 (2): 1131-1145 FEB 2010
Language:
English
Document Type:
Article
Author Keywords:
carbon nanotubes; carpets; optical absorption; Raman spectroscopy
KeyWords Plus:
RAMAN-SPECTROSCOPY; GROWTH; FILMS; SPECTRA; CATALYST; CARPETS; ARRAYS; FLUORESCENCE; TRANSISTORS; SELECTIVITY
Abstract:
A scalable and facile approach Is demonstrated where as-grown patterns of well-aligned structures composed of single-walled carbon nanotubes (SWNT) synthesized via water-assisted chemical vapor deposition (CVD) can be transferred, or printed, to any host surface in a single dry, room-temperature step using the growth substrate as a stamp. We demonstrate compatibility of this process with multiple transfers for large-scale device and specifically tailored pattern fabrication. Utilizing this transfer approach, anisotropic optical properties of the SWNT films are probed via polarized absorption, Raman, and photoluminescence spectroscopies. Using a simple model to describe optical transitions in the large SWNT species present in the aligned samples, polarized absorption data are demonstrated as an effective tool for accurate assignment of the diameter distribution from broad absorption features located in the infrared. This can be performed on either well-aligned samples or unal!
igned doped samples, allowing simple and rapid feedback of the SWNT diameter distribution that can be challenging and time-consuming to obtain in other optical methods. Furthermore, we discuss challenges in accurately characterizing alignment in structures of long versus short carbon nanotubes through optical techniques, where SWNT length makes a difference in the information obtained in such measurements. This work provides new insight to the efficient transfer and optical properties of an emerging class of long, large diameter SWNT species typically produced in the CVD process.
Reprint Address:
Hauge, RH, Rice Univ, Dept Chem, Houston, TX 77005 USA.
Research Institution addresses:
[Cherukuri, Tonya; Alvarez, Noe T.; Pasquali, Matteo; Hauge, Robert H.] Rice Univ, Dept Chem, Houston, TX 77005 USA; [Pint, Cary L.; Haroz, Erik H.] Rice Univ, Dept Phys & Astron, Houston, TX 77005 USA; [Kono, Junichiro] Rice Univ, Dept Elect & Comp Engn, Houston, TX 77005 USA; [Pasquali, Matteo] Rice Univ, Dept Chem & Biomol Engn, Houston, TX 77005 USA; [Pint, Cary L.; Moghazy, Sharief; Cherukuri, Tonya; Alvarez, Noe T.; Haroz, Erik H.; Mahzooni, Salma; Kono, Junichiro; Hauge, Robert H.] Rice Univ, Richard E Smalley Inst Nanoscale Sci & Technol, Houston, TX 77005 USA; [Xu, Ya-Qiong] Vanderbilt Univ, Dept Elect Engn & Comp Sci, Nashville, TN 37235 USA; [Xu, Ya-Qiong] Vanderbilt Univ, Dept Phys & Astron, Nashville, TN 37235 USA; [Doorn, Stephen K.] Los Alamos Natl Lab, Div Chem, Los Alamos, NM 87545 USA
E-mail Address:
hauge@rice.edu
Cited References:
AKIMA N, 2006, ADV MATER, V18, P1166, DOI 10.1002/adma.200502505.
AMAMA PB, 2009, NANO LETT, V9, P44, DOI 10.1021/nl801876h.
ARAUJO PT, 2008, PHYS REV B, V77, ARTN 241403.
BACHILO SM, 2002, SCIENCE, V298, P2361, DOI 10.1126/science.1078727.
CAPAZ RB, 2006, PHYS REV B, V74, ARTN 121401.
CAPAZ RB, 2007, PHYS STATUS SOLIDI B, V244, P4016, DOI 10.1002/pssb.200776200.
CHANG JC, 2003, BIOMATERIALS, V24, P2863, DOI 10.1016/S0142-9612(03)00116-9.
CHEN J, 1998, SCIENCE, V282, P95.
DOOM SK, 2008, PHYS REV B, V78, UNSP 165408.
DRESSELHAUS MS, 2005, PHYS REP, V409, P47, DOI 10.1016/j.physrep.2004.10.006.
DUESBERG GS, 2000, PHYS REV LETT, V85, P5436.
DUKOVIC G, 2005, NANO LETT, V5, P2314, DOI 10.1021/nl058122.
EINARSSON E, 2007, J PHYS CHEM C, V111, P17861, DOI 10.1021/jp071328i.
FAGAN JA, 2007, J AM CHEM SOC, V129, P10607, DOI 10.1021/ja073115c.
FAGAN JA, 2007, PHYS REV LETT, V98, ARTN 147402.
FISCHER JE, 2003, J APPL PHYS, V93, P2157, DOI 10.1063/1.1536733.
FUTABA DN, 2005, PHYS REV LETT, V95, ARTN 056104.
GE L, 2007, P NATL ACAD SCI USA, V104, P10792.
GRUNEIS A, 2004, CHEM PHYS LETT, V387, P301, DOI 10.1016/j.cplett.2004.02.034.
HATA K, 2004, SCIENCE, V306, P1362.
HU H, 2003, J PHYS CHEM B, V107, P13838, DOI 10.1021/jp035719i.
HUR SH, 2004, APPL PHYS LETT, V85, P5730, DOI 10.1063/1.1829774.
HWANG J, 2000, PHYS REV B, V62, UNSP R13310.
IM J, 2009, APPL PHYS LETT, V94, ARTN 053109.
ISHIKAWA FN, 2009, ACS NANO, V3, P73, DOI 10.1021/nn800434d.
ITKIS ME, 2002, NANO LETTERS, V2, P155.
ITKIS ME, 2003, NANO LETT, V3, P309, DOI 10.1021/nl025926e.
JORIO A, 2003, PHYS REV LETT, V90, ARTN 107403.
JORIO A, 2005, PHYS REV B, V71, ARTN 075401.
KANE CL, 2003, PHYS REV LETT, V90, ARTN 207401.
KANE CL, 2004, PHYS REV LETT, V93, ARTN 197402.
KANG SJ, 2007, NANO LETT, V7, P3343, DOI 10.1021/nl071596s.
KAZAOUI S, 1999, PHYS REV B, V60, P13339.
KILINA S, 2008, P NATL ACAD SCI USA, V105, P6797, DOI 10.1073/pnas.0711646105.
KOCABAS C, 2009, NANO LETT, V9, P1937, DOI 10.1021/nl9001074.
KUMAR A, 2006, APPL PHYS LETT, V89, ARTN 163120.
LEFEBVRE J, 2008, NANO LETT, V8, P1890, DOI 10.1021/nl080518h.
LIU P, 2009, ADV MATER, DOI 10.1002/ADMA.200900473.
MAJUMDER M, 2005, NATURE, V438, P44, DOI 10.1038/43844a.
MARUYAMA S, 2005, CHEM PHYS LETT, V403, P320, DOI 10.1016/j.cplett.2005.01.031.
MAULTZSCH J, 2005, PHYS REV B, V72, ARTN 241402.
MEITL MA, 2004, NANO LETT, V4, P1643, DOI 10.1021/nl0491935.
MENARD E, 2005, APPL PHYS LETT, V86, ARTN 093507.
MUKAI K, 2009, ADV MATER, V21, P1582, DOI 10.1002/adma.200802817.
MURAKAMI Y, 2004, CHEM PHYS LETT, V385, P298, DOI 10.1016/j.cplett.2003.12.095.
MURAKAMI Y, 2005, CARBON, V43, P2664, DOI 10.1016/j.carbon.2005.05.036.
MURAKAMI Y, 2005, PHYS REV B, V71, ARTN 085403.
MURAKAMI Y, 2005, PHYS REV LETT, V94, ARTN 087402.
NIYOGI S, 2002, ACCOUNTS CHEM RES, V35, P1105, DOI 10.1021/ar010155r.
OCONNELL MJ, 2002, SCIENCE, V297, P593.
OCONNELL MJ, 2004, PHYS REV B, V69, ARTN 235415.
OCONNELL MJ, 2005, NAT MATER, V4, P412, DOI 10.1038/nmat1367.
ODOM TW, 2000, J PHYS CHEM B, V104, P2794.
PEREBEINOS V, 2004, PHYS REV LETT, V92, ARTN 257402.
PINT CL, 2008, ACS NANO, V2, P1871, DOI 10.1021/nn8003718.
PINT CL, 2008, J PHYS CHEM C, V112, P14041, DOI 10.1021/jpS025539.
PINT CL, 2008, NANO LETT, V8, P1879, DOI 10.1021/nl0804295.
PINT CL, 2009, ACS NANO, V3, P1897, DOI 10.1021/nn900225h.
PINT CL, 2009, APPL PHYS LETT, V94, ARTN 182107.
PINT CL, 2009, CHEM MATER, V21, P1550, DOI 10.1021/cm8031626.
PINT CL, 2009, J PHYS CHEM C, V113, P4125, DOI 10.1021/jp8070585.
PINT CL, 2009, NANO RES, V2, P526, DOI 10.1007/s12274-009-9050-7.
QU LT, 2008, NANO LETT, V8, P2682, DOI 10.1021/nl800967n.
REN L, UNPUB.
REN L, 2009, NANO LETT, V9, P2610, DOI 10.1021/nl900815s.
SETHI S, 2008, NANO LETT, V8, P822, DOI 10.1021/nl0727765.
SUN YG, 2004, NANO LETT, V4, P1953, DOI 10.1021/nl048835l.
TAWFICK S, 2009, SMALL, V94, P2467.
TSYBOULSKI DA, 2005, NANO LETT, V5, P975, DOI 10.1021/nl050366f.
UGAWA A, 1999, PHYS REV B, V60, UNSP R11305.
UGAWA A, 2001, CURR APPL PHYS, V1, P45.
WANG H, 2006, APPL PHYS LETT, V88, ARTN 213111.
WANG T, 2007, APPL PHYS LETT, V97, UNSP 093123.
WEISMAN RB, 2003, NANO LETT, V3, P1235, DOI 10.1021/nl034428i.
XIAO L, 2008, NANO LETT, V8, P4539, DOI 10.1021/nl802750z.
XU YQ, 2006, J AM CHEM SOC, V128, P6560, DOI 10.1021/ja060944+.
ZHANG L, 2008, NANO LETT, V8, P2564, DOI 10.1021/nl8012727.
ZHANG Q, 2009, ADV MATER, V27, P2876.
ZHAO B, 2009, ACS NANO, V3, P108, DOI 10.1021/nn800648a.
ZHOU YX, 2006, APPL PHYS LETT, V88, ARTN 123109.
ZHU YW, 2008, NANOTECHNOLOGY, V19, ARTN 325304.
Cited Reference Count:
81
Times Cited:
0
Publisher:
AMER CHEMICAL SOC; 1155 16TH ST, NW, WASHINGTON, DC 20036 USA
Subject Category:
Chemistry, Multidisciplinary; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary
ISSN:
1936-0851
DOI:
10.1021/nn9013356
IDS Number:
556ZI
========================================================================
*Order Full Text*
All Customers
--------------
Please contact your library administrator, or person(s) responsible for
document delivery, to find out more about your organization's policy for
obtaining the full text of the above articles. If your organization does
not have a current document delivery provider, your administrator can
contact ISI Document Solution at service@isidoc.com, or call 800-603-4367
or 734-459-8565.
IDS Customers
--------------
IDS customers can purchase the full text of an article (having page number,
volume, and issue information) by returning this ENTIRE message as a Reply
to Sender or Forward to orders@isidoc.com. Mark your choices with an X in
the "Order Full Text: []" brackets for each item. For example, [X].
Please enter your account number here:
========================================================================
*Help Desk Contact Information*
If you have any questions, please visit the Thomson Scientific Technical Support Contact Information Web page:
http://www.thomsonscientific.com/support/techsupport
========================================================================
No comments:
Post a Comment