Friday, February 27, 2009

ISI Web of Knowledge Alert - Ghosh, S

ISI Web of Knowledge Citation Alert

Cited Article: Ghosh, S. Carbon nanotube flow sensors
Alert Expires: 22 OCT 2009
Number of Citing Articles: 1 new records this week (1 in this e-mail)
Organization ID: 3b97d1bbc1878baed0ab183d8b03130b
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Title:
Direct printing of aligned carbon nanotube patterns for high-performance thin film devices

Authors:
Im, J; Lee, IH; Lee, BY; Kim, B; Park, J; Yu, W; Kim, UJ; Lee, YH; Seong, MJ; Lee, EH; Min, YS; Hong, S

Author Full Names:
Im, Jiwoon; Lee, Il-Ha; Lee, Byung Yang; Kim, Byeongju; Park, June; Yu, Woojong; Kim, Un Jeong; Lee, Young Hee; Seong, Maeng-Je; Lee, Eun Hong; Min, Yo-Sep; Hong, Seunghun

Source:
APPLIED PHYSICS LETTERS 94 (5): Art. No. 053109 FEB 2 2009

Language:
English

Document Type:
Article

Author Keywords:
carbon nanotubes; field effect transistors; gas sensors; nanopatterning; printing; Raman spectra; silicon compounds; thin film devices; nanofabrication

KeyWords Plus:
FIELD-EFFECT TRANSISTORS; LARGE-SCALE; RAMAN-SPECTROSCOPY; SINGLE; ARRAYS; GROWTH; DEPOSITION

Abstract:
The aligned assembly of carbon nanotubes (CNTs) on substrate presents a significant bottleneck in the fabrication of high-performance thin film devices. Here, we report a direct printing method to prepare laterally aligned thick CNT patterns over large surface regions. In this method, CNT forests were grown selectively on specific regions of one substrate, and the forest patterns were transferred on another SiO2 substrate in a laterally aligned formation while keeping their original shapes. The degree of alignment was characterized via electrical measurement and polarized Raman spectroscopy. Furthermore, we demonstrated high-performance field-effect transistors and gas sensors using our method.

Reprint Address:
Im, J, Seoul Natl Univ, Dept Phys & Astron, Seoul 151747, South Korea.

Research Institution addresses:
[Im, Jiwoon; Lee, Byung Yang; Kim, Byeongju; Hong, Seunghun] Seoul Natl Univ, Dept Phys & Astron, Seoul 151747, South Korea; [Im, Jiwoon; Lee, Il-Ha; Yu, Woojong; Kim, Un Jeong; Lee, Eun Hong] Samsung Adv Inst Technol, Frontier Res Lab, Yongin 449712, Gyeonggi Do, South Korea; [Lee, Il-Ha; Yu, Woojong; Lee, Young Hee] Sungkyunkwan Univ, Sungkyunkwan Adv Inst Technol, Ctr Nanotubes & Nanostruct Composites, Dept Phys, Suwon 440746, South Korea; [Seong, Maeng-Je] Chung Ang Univ, Dept Phys, Seoul 156756, South Korea; [Min, Yo-Sep] Konkuk Univ, Dept Chem Engn, Seoul 143701, South Korea

E-mail Address:
elee@samsung.com; ysmin@konkuk.ac.kr; seunghun@snu.ac.kr

Cited References:
*EPAPS, EAPPLAB94038904 EPAP.
CUI Y, 2001, SCIENCE, V293, P1289.
DERYCKE V, 2002, APPL PHYS LETT, V80, P2773.
FAN ZY, 2008, NANO LETT, V8, P20, DOI 10.1021/nI071626r.
GHOSH S, 2003, SCIENCE, V299, P1042, DOI 10.1126/science.1079080.
GOMMANS HH, 2000, J APPL PHYS, V88, P2509.
HILDING J, 2003, J DISPER SCI TECHNOL, V24, P1, DOI 10.1081/DIS-120017941.
HUANG Y, 2001, SCIENCE, V291, P630.
IM J, 2006, J CHEM PHYS, V124, ARTN 224707.
JAVEY A, 2003, NATURE, V424, P654, DOI 10.1038/nature01797.
KANG J, 2008, NANOTECHNOLOGY, V19, ARTN 135305.
KANG SJ, 2007, NANO LETT, V7, P3343, DOI 10.1021/nl071596s.
KOCABAS C, 2005, SMALL, V1, P1110, DOI 10.1002/smll.200500120.
KOCABAS C, 2007, NANO LETT, V7, P1195, DOI 10.1021/nl062907m.
KRUPKE R, 2003, SCIENCE, V301, P344, DOI 10.1126/science.1086534.
LEE IH, LOW TEMPERATUR UNPUB.
LIU J, 1999, CHEM PHYS LETT, V303, P125.
MARTEL R, 1998, APPL PHYS LETT, V73, P2447.
MIN YS, 2005, J AM CHEM SOC, V127, P12498, DOI 10.1021/ja054108w.
MYUNG S, 2005, ADV MATER, V17, P2361, DOI 10.1002/adma.200500682.
NURAJE N, 2004, J AM CHEM SOC, V126, P8088, DOI 10.1021/ja048617u.
PARK J, POLARIZED RAMA UNPUB.
PARK J, 2006, J KOREAN PHYS SOC, V48, P1347.
PARK SY, 2007, ADV MATER, V19, P2530, DOI 10.1002/adma.200600875.
QI P, 2003, NANO LETT, V3, P347.
RAO SG, 2003, NATURE, V425, P36, DOI 10.1038/425036a.
SKAKALOVA V, 2006, PHYS REV B, V74, ARTN 085403.
TANS SJ, 1998, NATURE, V393, P49.
ZHOU CW, 2000, SCIENCE, V290, P1552.

Cited Reference Count:
29

Times Cited:
0

Publisher:
AMER INST PHYSICS; CIRCULATION & FULFILLMENT DIV, 2 HUNTINGTON QUADRANGLE, STE 1 N O 1, MELVILLE, NY 11747-4501 USA

Subject Category:
Physics, Applied

ISSN:
0003-6951

DOI:
10.1063/1.3073748

IDS Number:
404QB

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