Cited Article: Ghosh, S. Carbon nanotube flow sensors
Alert Expires: 22 OCT 2009
Number of Citing Articles: 3 new records this week (3 in this e-mail)
Organization ID: 3b97d1bbc1878baed0ab183d8b03130b
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Title:
Renormalization of the phonon spectrum in semiconducting single-walled carbon nanotubes studied by Raman spectroscopy
Authors:
Das, A; Sood, AK
Author Full Names:
Das, Anindya; Sood, A. K.
Source:
PHYSICAL REVIEW B 79 (23): Art. No. 235429 JUN 2009
Language:
English
Document Type:
Article
KeyWords Plus:
TRANSISTOR; GRAPHENE; SCATTERING; FILMS
Abstract:
In situ Raman experiments together with transport measurements have been carried out in single-walled carbon nanotubes as a function of electrochemical top gate voltage (V-g). We have used the green laser (E-L = 2.41 eV), where the semiconducting nanotubes of diameter similar to 1.4 nm are in resonance condition. In semiconducting nanotubes, the G(-)- and G(+)-mode frequencies increase by similar to 10 cm(-1) for hole doping, the frequency shift of the G(-) mode is larger compared to the G(+) mode at the same gate voltage. However, for electron doping the shifts are much smaller: G(-) upshifts by only similar to 2 cm(-1) whereas the G(+) does not shift. The transport measurements are used to quantify the Fermi-energy shift (E-F) as a function of the gate voltage. The electron-hole asymmetry in G- and G+ modes is quantitatively explained using nonadiabatic effects together with lattice relaxation contribution. The electron-phonon coupling matrix elements of transverse-optic (!
G(-)) and longitudinal-optic (G(+)) modes explain why the G- mode is more blueshifted compared to the G(+) mode at the same V-g. The D and 2D bands have different doping dependence compared to the G(+) and G(-) bands. There is a large downshift in the frequency of the 2D band (similar to 18 cm(-1)) and D (similar to 10 cm(-1)) band for electron doping, whereas the 2D band remains constant for the hole doping but D upshifts by similar to 8 cm(-1). The doping dependence of the overtone of the G bands (2G bands) shows behavior similar to the dependence of the G+ and G(-) bands.
Reprint Address:
Das, A, Indian Inst Sci, Dept Phys, Bangalore 560012, Karnataka, India.
Research Institution addresses:
[Das, Anindya; Sood, A. K.] Indian Inst Sci, Dept Phys, Bangalore 560012, Karnataka, India
E-mail Address:
asood@physics.iisc.ernet.in
Cited References:
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Cited Reference Count:
40
Times Cited:
0
Publisher:
AMER PHYSICAL SOC; ONE PHYSICS ELLIPSE, COLLEGE PK, MD 20740-3844 USA
Subject Category:
Physics, Condensed Matter
ISSN:
1098-0121
DOI:
10.1103/PhysRevB.79.235429
IDS Number:
466XU
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Title:
Large-scale production and metrology of vertically aligned carbon nanotube films
Authors:
Dai, L; Wang, P; Bosnick, K
Author Full Names:
Dai, Lei; Wang, Peter; Bosnick, Ken
Source:
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A 27 (4): 1071-1075 JUL 2009
Language:
English
Document Type:
Proceedings Paper
Author Keywords:
carbon nanotubes; chemical vapour deposition; chromium; electron microscopy; iron; measurement standards; metallic thin films; multilayers; nanotechnology; nickel; quality control; thin films
KeyWords Plus:
CHEMICAL-VAPOR-DEPOSITION; GROWTH; SENSORS
Abstract:
The authors have produced carbon nanotube (CNT) films on a large scale in a commercial chemical vapor deposition (CVD) reactor. The reactor (built by Tystar, Inc) is the first of its kind and is capable of handling up to 50 150 mm wafers simultaneously with industry standard process control. Electron microscopy reveals that the CNT films consist of densely packed and vertically aligned multiwalled CNTs. A variety of catalysts and reaction conditions were systematically tested. Both Fe films and Cr/Ni/Fe film stacks have been found favorable for the growth of aligned CNT films. While electron microscopy provides invaluable information, it is qualitative and unsuitable for process optimization and industrial quality control. A quantitative metrology standard is required for these purposes, but has to date not been explicitly defined. They report on their initial developments toward this metrology standard, considering such factors as film thickness (or CNT length), CNT wall nu!
mber and diameter, amorphous carbon content, and uniformity. Various measurement techniques have been investigated and are discussed. The developed metrology will facilitate quality control and process optimization necessary for industry applications of CNT films.
Reprint Address:
Dai, L, Natl Res Council Canada, Appl Nanomat Technol Team, Natl Inst Nanotechnol, 11421 Saskatchewan Dr, Edmonton, AB T6G 2M9, Canada.
Research Institution addresses:
[Dai, Lei; Wang, Peter; Bosnick, Ken] Natl Res Council Canada, Appl Nanomat Technol Team, Natl Inst Nanotechnol, Edmonton, AB T6G 2M9, Canada
E-mail Address:
ken.bosnick@nrc.ca
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Cited Reference Count:
22
Times Cited:
0
Publisher:
A V S AMER INST PHYSICS; STE 1 NO 1, 2 HUNTINGTON QUADRANGLE, MELVILLE, NY 11747-4502 USA
Subject Category:
Materials Science, Coatings & Films; Physics, Applied
ISSN:
0734-2101
DOI:
10.1116/1.3148827
IDS Number:
465PT
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Title:
Transport properties and induced voltage in the structure of water-filled single-walled boron-nitrogen nanotubes
Authors:
Yuan, QZ; Zhao, YP
Author Full Names:
Yuan, Quanzi; Zhao, Ya-Pu
Source:
BIOMICROFLUIDICS 3 (2): Art. No. 022411 APR-JUN 2009
Language:
English
Document Type:
Proceedings Paper
Author Keywords:
boron compounds; density functional theory; diffusion; III-V semiconductors; molecular dynamics method; nanofluidics; pipe flow; semiconductor nanotubes; wide band gap semiconductors
KeyWords Plus:
CARBON NANOTUBES; MOLECULAR-DYNAMICS; NITRIDE NANOTUBES; CHANNEL; FLOW; LIQUIDS
Abstract:
Density functional theory/molecular dynamics simulations were employed to give insights into the mechanism of voltage generation based on a water-filled single-walled boron-nitrogen nanotube (SWBNNT). Our calculations showed that (1) the transport properties of confined water in a SWBNNT are different from those of bulk water in view of configuration, the diffusion coefficient, the dipole orientation, and the density distribution, and (2) a voltage difference of several millivolts would generate between the two ends of a SWBNNT due to interactions between the water dipole chains and charge carriers in the tube. Therefore, this structure of a water-filled SWBNNT can be a promising candidate for a synthetic nanoscale power cell as well as a practical nanopower harvesting device.
Reprint Address:
Zhao, YP, Chinese Acad Sci, Inst Mech, State Key Lab Nonlinear Mech LNM, Beijing 100190, Peoples R China.
Research Institution addresses:
[Yuan, Quanzi; Zhao, Ya-Pu] Chinese Acad Sci, Inst Mech, State Key Lab Nonlinear Mech LNM, Beijing 100190, Peoples R China
E-mail Address:
yzhao@imech.ac.cn
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Cited Reference Count:
28
Times Cited:
1
Publisher:
AMER INST PHYSICS; CIRCULATION & FULFILLMENT DIV, 2 HUNTINGTON QUADRANGLE, STE 1 N O 1, MELVILLE, NY 11747-4501 USA
Subject Category:
Biophysics; Nanoscience & Nanotechnology; Physics, Fluids & Plasmas
ISSN:
1932-1058
DOI:
10.1063/1.3158618
IDS Number:
465PW
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