Cited Article: Ghosh, S. Carbon nanotube flow sensors
Alert Expires: 09 NOV 2010
Number of Citing Articles: 1 new records this week (1 in this e-mail)
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Title:
Sense toxins/sewage gases by chemically and biologically functionalized single-walled carbon nanotube sensor based microwave resonator
Authors:
Tooski, SB
Author Full Names:
Tooski, S. B.
Source:
JOURNAL OF APPLIED PHYSICS 107 (1): Art. No. 014702 JAN 1 2010
Language:
English
Document Type:
Article
Author Keywords:
carbon nanotubes; gas sensors; high-frequency effects; microwave spectra; permittivity
KeyWords Plus:
ORGANIC-VAPOR DETECTION; ROOM-TEMPERATURE; THIN-FILMS; AMMONIA; SENSITIVITY; FABRICATION; COMPOSITES; BIOSENSOR; OXIDE
Abstract:
In this work the complex permittivity and microwave absorption of toxins/sewage gases and functionalized single-walled carbon nanotube sensors in a perturbed microwave resonant cavity are studied with the aid of a kinetic model. The results show that the real permittivity decreases and the imaginary permittivity increases with increasing the electron density; however, the real permittivity increases and the imaginary permittivity decreases with the collision frequency increasing. The results furthermore show that low electron density and high collision frequency can greatly reduce the microwave absorption, while high electron density and low collision frequency can increase the microwave absorption. The microwave absorption shifts to high frequency with increasing the electron density. The microwave absorption, in contrast, shifts to low frequency with the collision frequency increasing. The kinetic model may be used to study the effects of gas pressure on the complex permit!
tivity and microwave absorption.
Reprint Address:
Tooski, SB, Amir Kabir Univ Technol, Tehran Polytech, Dept Phys, Lab Mat & Nanotechnol, POB 15875-4413, Tehran, Iran.
Research Institution addresses:
[Tooski, S. B.] Amir Kabir Univ Technol, Tehran Polytech, Dept Phys, Lab Mat & Nanotechnol, Tehran, Iran; [Tooski, S. B.] Amir Kabir Univ Technol, Tehran Polytech, Appl Phys Lab, Tehran, Iran
E-mail Address:
s.b.tooski@gmail.com
Cited References:
ADHIKARI B, 2004, PROG POLYM SCI, V29, P699, DOI 10.1016/j.progpolymsci.2004.03.002.
ANAND A, 2005, NUCL INSTRUM METH B, V241, P511, DOI 10.1016/j.nimb.2005.07.062.
ANAND A, 2006, AM PHYS SOC TE UNPUB.
ANAND A, 2007, THESIS U N TEXAS.
ANAND A, 2008, FUNCTIONALIZED NANOM, P351.
BARONE PW, 2005, NAT MATER, V4, P86, DOI 10.1038/nmat1276.
BEKYAROVA E, 2004, J PHYS CHEM B, V108, P19717.
BOUL PJ, 1999, CHEM PHYS LETT, V310, P367.
CHOPRA S, 2002, APPL PHYS LETT, V80, P4632.
CHOPRA S, 2002, IEEE INT MICR S, V2, P639.
CHOPRA S, 2002, THESIS CLEMSON U.
CHOPRA S, 2003, APPL PHYS LETT, V83, P2280, DOI 10.1063/1.1610251.
CHUNG JY, 2004, NANOTECHNOLOGY, V15, P1596, DOI 10.1088/0957-4484/15/11/038.
COLLINS PG, 2000, SCIENCE, V287, P1801.
DAVIS JJ, 2003, CHEM-EUR J, V9, P3732, DOI 10.1002/chem.200304872.
DHARAP P, 2004, NANOTECHNOLOGY, V15, P379.
DRAGOMAN M, 2007, J APPL PHYS, V101, ARTN 106103.
ESPINOSA EH, 2007, THIN SOLID FILMS, V515, P8322, DOI 10.1016/j.tsf.2007.03.017.
FU Q, 2002, NANO LETTERS, V2, P329.
GHOSH S, 2003, SCIENCE, V299, P1042, DOI 10.1126/science.1079080.
HAN WQ, 2003, NANO LETT, V3, P681, DOI 10.1021/nl034142d.
HEALD MA, 1978, PLASMA DIAGNOSTICS M.
HELBLING T, 2008, SENSOR ACTUAT B-CHEM, V132, P491, DOI 10.1016/j.snb.2007.11.036.
HENLEY D, 2006, 0275914, US.
HIEROLD C, 2007, SENSOR ACTUAT A-PHYS, V136, P51, DOI 10.1016/j.sna.2007.02.007.
IONESCU R, 2006, SENSOR ACTUAT B-CHEM, V113, P36, DOI 10.1016/j.snb.2005.02.020.
JINXIA C, 2005, CHIN J SENSOR ACTUAT, V18, P39.
KONG J, 2000, SCIENCE, V287, P622.
KONG J, 2001, J PHYS CHEM B, V105, P2890.
KRALL NA, 1973, PRINCIPLES PLASMA PH.
LI J, 2003, NANO LETT, V3, P929, DOI 10.1021/nl034220x.
LIAO SY, 1980, MICROWAVE DEVICES CI.
MAKLIN J, 2007, PHYS STATUS SOLIDI B, V244, P4298, DOI 10.1002/pssb.200776118.
MATTSON MP, 2000, J MOL NEUROSCI, V14, P175.
MCGRATH MP, 2006, INT J HIGH SPEED ELE, V16, P913.
NGUYEN HQ, 2005, MATER SCI FORUM, V486, P485.
ONG KG, 2002, IEEE SENS J, V2, P82.
PENZA M, 2004, P IEEE SENS, V1, P403.
PENZA M, 2004, SENSOR ACTUAT B-CHEM, V100, P47, DOI 10.1016/j.snb.2003.12.019.
PENZA M, 2005, CHEM PHYS LETT, V409, P349, DOI 10.1016/j.cplett.2005.05.005.
PEREZ B, 2005, J NANOSCI NANOTECHNO, V5, P1694, DOI 10.1166/jnn.2005.400.
PICAUD F, 2005, J APPL PHYS, V97, ARTN 114316.
PICAUD F, 2009, SENSOR ACTUAT A-PHYS, V153, P37, DOI 10.1016/j.sna.2009.04.016.
QI P, 2003, NANO LETT, V3, P347.
ROY RK, 2005, VACUUM, V77, P223, DOI 10.1016/j.vacuum.2004.08.023.
SAYAGO I, 2005, SYNTHETIC MET, V148, P15, DOI 10.1016/j.synthmet.2004.09.013.
SHIM M, 2001, J AM CHEM SOC, V123, P11512.
SOTIROPOULOU S, 2003, ANAL BIOANAL CHEM, V375, P103, DOI 10.1007/s00216-002-1617-z.
SUEHIRO J, 2003, J PHYS D APPL PHYS, V36, L109.
TISCHNER A, 2008, SENSOR ACTUAT B-CHEM, V134, P796, DOI 10.1016/j.snb.2008.06.032.
UTEGULOV ZN, 2005, J APPL PHYS 1, V97, ARTN 104324.
VALENTINI L, 2004, SENSOR ACTUAT B-CHEM, V100, P33, DOI 10.1016/j.snb.2003.12.017.
VILLALPANDOPAEZ F, 2004, CHEM PHYS LETT, V386, P137, DOI 10.1016/j.cplett.2004.01.052.
WEI BY, 2004, SENSOR ACTUAT B-CHEM, V101, P81, DOI 10.1016/j.snb.2004.02.028.
WONG YM, 2003, SENSOR ACTUAT B-CHEM, V93, P327, DOI 10.1016/S0925-4005(03)00213-2.
WOOD JR, 2000, PHYS REV B, V62, P7571.
YEUNG CS, 2008, J PHYS CHEM C, V112, P7401, DOI 10.1021/jp0753981.
ZHAO Q, 2005, NANO LETT, V5, P847, DOI 10.1021/nl050167w.
Cited Reference Count:
58
Times Cited:
0
Publisher:
AMER INST PHYSICS; CIRCULATION & FULFILLMENT DIV, 2 HUNTINGTON QUADRANGLE, STE 1 N O 1, MELVILLE, NY 11747-4501 USA
Subject Category:
Physics, Applied
ISSN:
0021-8979
DOI:
10.1063/1.3277020
IDS Number:
544WF
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